Ge3Sb2Te6

ceramic
· JVASP-143854· Ge3Sb2Te6

Ge3Sb2Te6 is a chalcogenide phase-change material composed of germanium, antimony, and tellurium, belonging to the family of materials that reversibly switch between amorphous and crystalline states upon thermal or electrical stimulation. This compound is primarily used in non-volatile memory applications and optical data storage, where its ability to rapidly and repeatedly transition between distinct structural phases enables reliable information storage and retrieval. Its selection over competing phase-change materials is driven by its optimized thermal stability, switching speed, and endurance characteristics, making it particularly valuable in advanced memory technologies where conventional approaches reach practical limits.

phase-change memory (PCM) devicesnon-volatile data storageoptical rewritable mediathermal switching applicationshigh-endurance memory cells

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
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Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.