Ge₃N₄ is a germanium nitride ceramic compound that belongs to the family of wide-bandgap semiconductors and structural ceramics. It is primarily investigated in research contexts for high-temperature electronics, optoelectronic devices, and advanced ceramic applications where thermal stability and chemical resistance are critical. This material represents an emerging alternative to more established nitrides like Si₃N₄ and GaN, offering potential advantages in thermal management and high-frequency applications, though industrial deployment remains limited compared to its silicon-based counterparts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 177.6 | GPa | — | ||
Poisson's Ratio(ν) | 0.3100 | - | — | ||
Shear Modulus(G) | 81.29 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.103 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.989 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 10.21 | - | — | ||
| ↳ | 12.35 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.3145 | C/m² | — | ||
Seebeck Coefficient(S) | -77.47 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.5883 | eV/atom | — | ||
| ↳ | -0.09015 | eV/atom | — |