Ge3Bi3O10.5

semiconductor

· Ge3Bi3O10.5

Ge3Bi3O10.5 is a mixed-metal oxide semiconductor compound containing germanium and bismuth, belonging to the family of complex oxide semiconductors with potential photocatalytic and optoelectronic properties. This material is primarily of research interest rather than established in high-volume production; it is being investigated for applications requiring bandgap engineering and visible-light response, where the combination of germanium and bismuth oxides may offer advantages over single-component alternatives. The layered or defect-structure nature of such compounds makes them candidates for photocatalytic water splitting and environmental remediation applications where conventional semiconductors fall short.

photocatalysis and water treatmentvisible-light photodetectorsexperimental optoelectronicsbismuth-germanium oxide researchenvironmental remediation catalystsadvanced semiconductor development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.300	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge3Bi3O10.5

Electrical Properties

Regulatory Screening

Environmental

Export Control