Ge3Sb1 is a germanium-antimony compound semiconductor belonging to the chalcogenide family, notable for its potential in phase-change memory and infrared optics applications. This material composition sits within the broader research space of phase-change materials (PCMs) and IV-VI semiconductors, where germanium-antimony alloys are investigated for reversible crystalline-to-amorphous transitions. While not a mainstream commercial material, Ge3Sb1 represents the type of engineered semiconductor compound used in next-generation data storage technologies and specialized photonic devices where thermal and electrical switching properties are exploited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00330 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.3690 | eV/atom | — |