Ge₃I₆ is an inorganic semiconductor compound composed of germanium and iodine, belonging to the family of metal halide semiconductors. This material is primarily of research and developmental interest rather than established in high-volume industrial production, with potential applications in optoelectronic devices, radiation detection, and photovoltaic systems where its bandgap and carrier transport properties may offer advantages in specific wavelength ranges or detection scenarios.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 17.91 | GPa | — | ||
Shear Modulus(G) | 9.667 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.062 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3600 | eV/atom | — |