Ge₂S is a binary chalcogenide ceramic compound composed of germanium and sulfur, belonging to the family of IV-VI semiconducting ceramics. This material is primarily investigated in research contexts for infrared optical applications, photonic devices, and solid-state electronics, where its wide bandgap and optical transparency in the infrared spectrum offer advantages over conventional semiconductors. Its potential extends to thermal imaging optics, waveguide components, and advanced ceramic coatings, though it remains less commercially established than related materials like germanium dioxide or conventional chalcogenide glasses.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,957.3 | ksi | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G) | 1,991.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1392 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4584 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.2187 | eV/atom | — |