Ge₂S₃I₂ is a mixed halide-chalcogenide ceramic compound combining germanium, sulfur, and iodine. This is a research-stage material rather than an established industrial ceramic, belonging to the broader family of chalcohalide glasses and crystals that show promise for infrared optics and solid-state ion conductivity applications. The material's layered structure and moderate exfoliation energy suggest potential as a two-dimensional or van der Waals material for next-generation photonic and electronic devices, particularly in applications requiring wide transparency windows or tunable optical properties in the infrared spectrum.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Exfoliation Energy(Eexf) | 388 | meV/atom | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.591 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.023 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 5.864 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -266.3 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01760 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3025 | eV/atom | — |