Ge₂I is an inorganic ceramic compound composed of germanium and iodine, belonging to the family of halide ceramics and semiconducting materials. This material is primarily of research and developmental interest rather than established commercial production, with potential applications in optoelectronic devices, radiation detection, and solid-state imaging systems where the combination of germanium's semiconducting properties and iodine's halide chemistry offers unique electronic characteristics. Engineers would consider Ge₂I for specialized applications requiring materials with specific band gap engineering, high-density structures, or environmental stability in demanding conditions, though material availability and processing maturity remain considerations compared to more established semiconductor alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,293.1 | ksi | — | ||
Poisson's Ratio(ν) | 0.3000 | - | — | ||
Shear Modulus(G) | 2,686.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1747 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2514 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.06025 | eV/atom | — |