Ge2Bi2Te5 is a quaternary chalcogenide ceramic compound belonging to the telluride family, combining germanium, bismuth, and tellurium in a layered crystal structure. This material is primarily investigated for phase-change memory (PCM) applications and thermoelectric devices, where its ability to rapidly switch between crystalline and amorphous states enables non-volatile data storage, and its moderate thermoelectric properties support solid-state cooling and power generation. While not yet widely commercialized compared to established alternatives like GST (Ge-Sb-Te), this compound represents an active research area for next-generation memory technologies and energy conversion systems where improved thermal stability and switching speed are critical.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2504 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.6100 | eV | DFT · OptB88vdW | ||
| ↳ | 0.7900 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 45.39 | - | DFT · OptB88vdW | ||
| ↳ | 35.76 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 26.17 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000400 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.1813 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data