Ge2Bi2Te5
ceramicGe2Bi2Te5 is a quaternary chalcogenide ceramic compound belonging to the telluride family, combining germanium, bismuth, and tellurium in a layered crystal structure. This material is primarily investigated for phase-change memory (PCM) applications and thermoelectric devices, where its ability to rapidly switch between crystalline and amorphous states enables non-volatile data storage, and its moderate thermoelectric properties support solid-state cooling and power generation. While not yet widely commercialized compared to established alternatives like GST (Ge-Sb-Te), this compound represents an active research area for next-generation memory technologies and energy conversion systems where improved thermal stability and switching speed are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.930 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6100 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000400 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1813 | eV/atom | — |