Ge₂Mo₆ is a layered transition metal dichalcogenide semiconductor compound combining germanium and molybdenum. This material belongs to an emerging class of 2D semiconductors being investigated for next-generation electronics and optoelectronics, where its layered crystal structure enables tunable bandgaps and enhanced carrier mobility compared to bulk alternatives. Research interest focuses on applications in flexible electronics, photovoltaics, and field-effect transistors, though the material remains largely in the experimental stage with ongoing studies into synthesis methods and device integration.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 34,286.9 | ksi | — | ||
Shear Modulus(G) | 16,403.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01370 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1110 | eV/atom | — |