Ge2 Mo6

semiconductor

· Ge2 Mo6

Ge₂Mo₆ is a layered transition metal dichalcogenide semiconductor compound combining germanium and molybdenum. This material belongs to an emerging class of 2D semiconductors being investigated for next-generation electronics and optoelectronics, where its layered crystal structure enables tunable bandgaps and enhanced carrier mobility compared to bulk alternatives. Research interest focuses on applications in flexible electronics, photovoltaics, and field-effect transistors, though the material remains largely in the experimental stage with ongoing studies into synthesis methods and device integration.

2D semiconductor researchflexible electronics developmentoptoelectronic devicesphotovoltaic applicationsfield-effect transistor channelsvan der Waals heterostructures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	236.4	GPa	—
Shear Modulus(G)	113.1	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01370	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.1110	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge2 Mo6

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control