Ge₂As₄Cd₂ is a compound semiconductor belonging to the chalcogenide family, combining group IV (germanium), group V (arsenic), and group II (cadmium) elements. This material is primarily of research interest for infrared optics and photonic applications, where its wide transparency window in the mid-to-far infrared spectrum makes it valuable for sensing and thermal imaging systems. The cadmium-containing composition offers potential advantages in nonlinear optical properties and tunable bandgap characteristics compared to simpler binary or ternary semiconductors, though it remains largely an experimental material in specialized optics rather than mainstream industrial production.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 54.21 | GPa | — | ||
Shear Modulus(G) | 27.89 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4699 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.06500 | eV/atom | — |