Ge1 is a pure germanium semiconductor material, representing elemental germanium in its crystalline form. Germanium is a Group IV semiconductor with a narrow bandgap that makes it particularly valuable for infrared optics and thermal imaging applications where silicon is less effective. Historically important in early transistor development, germanium remains in use for specialized optoelectronic devices, high-speed photodetectors, and infrared windows in aerospace and defense systems where its thermal and optical properties outperform alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,557.2 | ksi | — | ||
Shear Modulus(G) | 1,314 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01200 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.3660 | eV/atom | — |