Ge12 N8

semiconductor

· Ge12 N8

Ge12N8 is a germanium nitride compound semiconductor belonging to the III-V nitride family, synthesized for research into wide-bandgap semiconductor materials. This experimental composition is investigated for potential optoelectronic and high-temperature device applications, offering the possibility of tunable electronic properties distinct from more established nitride semiconductors like GaN and AlN.

experimental semiconductorswide-bandgap electronicshigh-temperature device researchoptoelectronic materials developmentcompound semiconductor synthesis

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3792	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.1460	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge12 N8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control