Ge1 Se1
semiconductorGe₁Se₁ (germanium monoselenide) is a binary IV-VI semiconductor compound combining germanium and selenium in a 1:1 stoichiometric ratio. This material belongs to the chalcogenide semiconductor family and is primarily of research and development interest rather than established in high-volume commercial production. Ge₁Se₁ is investigated for optoelectronic and photonic applications due to its narrow bandgap and strong light-matter interactions, with potential uses in infrared detectors, thermal imaging systems, and phase-change memory devices; it offers advantages over traditional semiconductors in specific wavelength ranges and represents a platform for exploring tunable optical properties through composition and structural engineering.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,489.5 | ksi | — | ||
Shear Modulus(G) | 7,130.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3619 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2510 | eV/atom | — |