Ge1Sb1 is a binary semiconductor compound in the germanium-antimony system, representing a stoichiometric intermetallic or solid-solution phase. This material is primarily of research interest in phase-change memory (PCM) applications and semiconductor device engineering, where it exhibits potential for reversible thermal and electrical switching behavior. GeSb compounds are notable alternatives to widely-used Ge2Sb2Te5 formulations, offering potential advantages in switching speed, thermal stability, or crystallization kinetics depending on specific composition and processing conditions.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,481.5 | ksi | — | ||
Shear Modulus(G) | 4,239 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01250 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1430 | eV/atom | — |