Ge1Pb3O5 is an experimental mixed-metal oxide semiconductor combining germanium and lead oxides, belonging to the broader family of multivalent metal oxides investigated for optoelectronic and photovoltaic applications. This compound is primarily of research interest rather than established industrial production; it represents an exploration of lead-germanium oxide systems for potential use in radiation detection, infrared sensing, or next-generation photovoltaic absorbers where the combined properties of lead and germanium oxides may offer advantages in bandgap engineering or charge transport. Engineers considering this material should treat it as an early-stage research compound requiring feasibility validation for specific applications, as commercial availability and long-term reliability data are limited compared to mature semiconductor alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,824.7 | ksi | — | ||
Shear Modulus(G) | 3,928.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.983 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.379 | eV/atom | — |