Ge1 Pb1 O3

semiconductor

· Ge1 Pb1 O3

Ge₁Pb₁O₃ is a mixed-metal oxide semiconductor compound combining germanium and lead oxides in a 1:1 stoichiometric ratio. This material belongs to the family of perovskite-related oxides and is primarily of research interest rather than established industrial production, with potential applications in optoelectronics and photovoltaic systems where the direct bandgap and mixed-cation structure could enable tunable electronic properties. The germanium-lead oxide system is being investigated as an alternative to purely lead-based semiconductors, offering potential advantages in stability and environmental profile while maintaining semiconducting behavior suitable for light emission or absorption devices.

Perovskite solar cells (research)Optoelectronic devicesInfrared detectorsLead-free semiconductor alternativesPhotovoltaic researchWide-bandgap semiconductor development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2648	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.472	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge1 Pb1 O3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control