Ge1C1 is a germanium carbide compound semiconductor, representing a binary ceramic material in the germanium-carbon system. This material combines the semiconductor properties of germanium with the mechanical hardness and thermal stability of carbide ceramics, making it of interest for advanced high-temperature and high-power electronic applications. As a research-phase material, germanium carbide compounds are investigated for next-generation power devices, photodetectors, and extreme-environment electronics where conventional semiconductors reach their performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 171.8 | GPa | — | ||
Shear Modulus(G) | 152.3 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9733 range 0.01930–1.927median of 2 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8405 range 0.4150–1.266median of 2 measurements | eV/atom | — |