Ge1 Bi3

semiconductor

· Ge1 Bi3

Ge1Bi3 is a bismuth-germanium compound semiconductor belonging to the V-VI group of narrow-bandgap materials, primarily studied in research contexts for thermoelectric and optoelectronic applications. This material is of interest in advanced thermoelectric device development and infrared detector research, where bismuth-rich compounds offer potential for improved performance in waste-heat recovery and thermal imaging systems compared to conventional binary semiconductors.

thermoelectric power generationinfrared detectorswaste heat recoveryresearch semiconductorsnarrow-bandgap devicesthermal management systems

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00110	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.2480	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge1 Bi3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control