Ge1 As3

semiconductor

· Ge1 As3

GeAs₃ is a III-V compound semiconductor composed of germanium and arsenic in a 1:3 stoichiometric ratio. This material belongs to the broader family of arsenide semiconductors and is primarily of research and specialized industrial interest rather than a mainstream commercial compound. GeAs₃ and related germanium arsenides are investigated for optoelectronic and photonic applications where bandgap engineering and lattice-matching properties may offer advantages in infrared detection, integrated photonics, or quantum-dot systems, though it remains less established than binary GaAs or AlAs semiconductors.

infrared optoelectronicscompound semiconductor researchquantum materialsphotonic integrated circuitsspecialized detector applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4290	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge1 As3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control