Ge0.9Si0.1

semiconductor

· Ge0.9Si0.1

Ge0.9Si0.1 is a germanium-silicon alloy semiconductor in which germanium comprises 90% of the composition and silicon 10%, forming a strained or relaxed heterostructure depending on growth conditions. This material is primarily of research and advanced device interest rather than high-volume production, valued for its tunable bandgap and lattice properties that bridge pure germanium and silicon, making it useful for infrared detection, high-speed electronics, and photovoltaic applications where the blend of material properties offers advantages over either single element alone.

infrared detectorshigh-speed transistorsheterojunction photovoltaicsstrained-layer epitaxyquantum wells and superlatticesoptoelectronic research devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge0.9Si0.1

Electrical Properties

Regulatory Screening

Environmental

Export Control