Ge0.97Si0.03

semiconductor

· Ge0.97Si0.03

Ge₀.₉₇Si₀.₀₃ is a germanium-silicon alloy in which silicon comprises approximately 3 atomic percent, creating a near-pure germanium material with minor silicon doping. This composition sits within the narrow tuning range used in infrared optoelectronics and high-speed photodetector research, where the Si addition modifies bandgap and lattice properties relative to bulk germanium. The alloy is primarily investigated for advanced detector systems and emerging infrared imaging applications where germanium's strong near-infrared absorption is desired but requires fine compositional control; it remains largely a research and specialized defense/aerospace component rather than a high-volume industrial material.

infrared photodetectorshigh-speed optical communicationsthermal imaging sensorsavalanche photodiode substratesspace/defense optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6700	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge0.97Si0.03

Electrical Properties

Regulatory Screening

Environmental

Export Control