Ge0.92Si0.08 is a germanium-silicon alloy semiconductor with a composition heavily weighted toward germanium (92%) with silicon doping (8%). This material belongs to the IV-IV compound semiconductor family and is primarily of research and specialized device interest, as it combines germanium's superior carrier mobility and narrow bandgap with silicon's lattice compatibility and processing advantages. The alloy is used in advanced optoelectronic and high-speed electronic devices where enhanced performance over pure germanium or silicon is needed, particularly in infrared detection, photodiodes, and heterojunction bipolar transistors operating at elevated temperatures or in radiation-hardened applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7200 | eV | — |