Ge0.8Si0.2

semiconductor

· Ge0.8Si0.2

Ge₀.₈Si₀.₂ is a germanium-silicon alloy semiconductor combining the lattice structure and electronic properties of both elements in an 80:20 composition ratio. This material is primarily investigated for infrared optoelectronics and high-speed electronic devices where the intermediate bandgap between pure germanium and silicon offers advantages in photon detection and carrier transport; it is also of interest in heterojunction applications and as a research platform for strain-engineered devices in advanced semiconductor technology.

infrared detectors and photodiodeshigh-frequency transistorsheterojunction optoelectronicsresearch-stage semiconductor engineeringlattice-matched device layers

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge0.8Si0.2

Electrical Properties

Regulatory Screening

Environmental

Export Control