Ge0.891Si0.109 is a germanium-silicon alloy containing approximately 89% germanium and 11% silicon, belonging to the IV-IV semiconductor material family. This composition sits within the SiGe alloy system and is primarily of research and specialized semiconductor device interest, where the high germanium content enables enhanced carrier mobility and reduced bandgap compared to pure silicon. The material is explored for advanced optoelectronic and high-speed electronic applications where germanium's superior transport properties offer performance advantages over conventional silicon, though commercial adoption remains limited due to cost, thermal mismatch, and process complexity considerations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.130 | eV | — |