Ge0.653Si0.347
semiconductor· Ge0.653Si0.347
Ge0.653Si0.347 is a germanium-silicon alloy semiconductor with a composition of approximately 65% germanium and 35% silicon. This material represents a Si-Ge heterostructure in the intermediate composition range, commonly explored for advanced optoelectronic and high-speed electronic applications where bandgap engineering and lattice matching are critical. Si-Ge alloys are widely used in integrated circuits, infrared detectors, and heterojunction bipolar transistors (HBTs) because the variable Ge:Si ratio allows tailoring of bandgap energy and lattice parameters to match specific device requirements and substrate constraints.
heterojunction bipolar transistors (HBTs)infrared detectors and photonicshigh-speed integrated circuitsstrained-layer epitaxy devicesoptoelectronic modulatorsradiation-hardened electronics
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.