Ge₀.₄₁Te₁Pb₀.₅₉ is a lead-tellurium-germanium compound semiconductor belonging to the IV-VI narrow-bandgap material family. This ternary alloy is primarily investigated in thermoelectric and infrared optoelectronic research, where the precise composition ratios are tuned to optimize charge carrier concentration and phonon scattering for thermal-to-electrical energy conversion or mid-to-far infrared detection applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4900 | eV | — |