Ge0.3Te1Pb0.7

semiconductor

· Ge0.3Te1Pb0.7

Ge₀.₃Te₁Pb₀.₇ is a lead-tellurium-germanium chalcogenide compound belonging to the narrow-bandgap semiconductor family, typically investigated as a thermoelectric and infrared-optoelectronic material. This composition sits within the PbTe–GeTe pseudobinary system, a well-studied platform for tuning band structure and carrier transport in lead chalcogenides. The material is primarily of research and developmental interest for mid-infrared sensing, thermoelectric power generation in waste-heat recovery, and potentially phase-change memory applications, where its mixed composition offers opportunities to engineer thermal, electrical, and optical properties relative to binary PbTe or GeTe.

thermoelectric devicesinfrared detectors and sensorswaste heat recoveryphase-change memory researchmid-IR optoelectronicsmaterials engineering research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.4800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge0.3Te1Pb0.7

Electrical Properties

Regulatory Screening

Environmental

Export Control