Ge0.39Te1Pb0.61

semiconductor

· Ge0.39Te1Pb0.61

Ge0.39Te1Pb0.61 is a lead–germanium–telluride compound semiconductor, part of the IV–VI narrow-bandgap semiconductor family typically investigated for infrared sensing and thermoelectric applications. This material composition sits within a research space focused on tuning bandgap and carrier transport properties for thermal imaging and waste-heat energy conversion; lead-telluride-based alloys are well-established in thermoelectric modules, while germanium additions modify lattice constants and electronic structure for optimization toward specific operating windows.

infrared detectors and thermal imagingthermoelectric cooling and power generationnarrow-bandgap semiconductor researchmid-infrared optoelectronicsspace and defense sensor systemslattice-engineering materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge0.39Te1Pb0.61

Electrical Properties

Regulatory Screening

Environmental

Export Control