Ge0.1Si0.9 is a germanium-silicon alloy containing 10% germanium and 90% silicon, belonging to the IV-IV semiconductor compound family. This material is primarily of research and developmental interest for advanced optoelectronic and high-speed electronic applications where lattice-engineered bandgap tuning offers advantages over pure silicon. The germanium addition modifies the electronic and optical properties of silicon, making it relevant for integrated photonics, infrared detectors, and next-generation CMOS technologies where performance beyond conventional silicon limits is needed.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.040 | eV | — |