Ge0.15Te1Pb0.85

semiconductor

· Ge0.15Te1Pb0.85

Ge₀.₁₅Te₁Pb₀.₈₅ is a lead-tellurium based semiconductor alloy with germanium doping, belonging to the IV-VI narrow-bandgap semiconductor family. This material is primarily investigated for thermoelectric and infrared detector applications, where its narrow bandgap and carrier mobility characteristics enable mid-to-far infrared sensing and heat-energy conversion at moderate temperatures. Compared to pure lead telluride, the germanium substitution modulates the bandgap and carrier dynamics, making it relevant for research into cost-effective thermal imaging, waste heat recovery systems, and space-based infrared instrumentation.

infrared photodetectorsthermoelectric power generationthermal imaging sensorswaste heat recoverynarrow-bandgap semiconductorsresearch and development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3600	eV	—

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Regulatory Screening

Environmental

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Ge0.15Te1Pb0.85

Electrical Properties

Regulatory Screening

Environmental

Export Control