Ge0.05Pb0.95Se1

semiconductor

· Ge0.05Pb0.95Se1

Ge0.05Pb0.95Se1 is a lead selenide-based narrow bandgap semiconductor alloy with a small germanium dopant, belonging to the IV-VI semiconductor family. This material is primarily investigated for infrared (IR) detection and thermal imaging applications, where its narrow bandgap enables sensitivity in the mid- to long-wave infrared spectrum. It is an advanced research compound rather than a commodity material; germanium-doped lead selenide systems are engineered to optimize carrier concentration and thermal stability for cryogenic and room-temperature IR sensor designs, competing with mercury cadmium telluride (MCT) and indium antimonide in specialized defense and scientific instrumentation markets.

infrared detectorsthermal imaging sensorscryogenic photodetectorsmilitary surveillance systemsspectroscopic instrumentation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge0.05Pb0.95Se1

Electrical Properties

Regulatory Screening

Environmental

Export Control