Ge0.03Pb0.97Se0.97S0.03

semiconductor

· Ge0.03Pb0.97Se0.97S0.03

Ge0.03Pb0.97Se0.97S0.03 is a lead chalcogenide semiconductor alloy, specifically a doped lead selenide composition with small additions of germanium and sulfur. This quaternary compound belongs to the narrow-bandgap semiconductor family and is primarily investigated for infrared (IR) detection and thermal imaging applications where sensitivity to mid-wave and long-wave infrared radiation is required. The material is notable for its potential to offer tunable bandgap properties and improved performance characteristics compared to conventional binary PbSe, making it of particular interest in defense, thermal sensing, and space-based optical systems where high-performance IR detectors are critical.

infrared detectorsthermal imaging sensorsmid-wave IR applicationslong-wave IR detectiondefense and surveillance systemsspace-based sensing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge0.03Pb0.97Se0.97S0.03

Electrical Properties

Regulatory Screening

Environmental

Export Control