This is an experimental lead-tellurium-selenium (PbTeSe) compound heavily doped with germanium and tellurium, belonging to the IV-VI narrow bandgap semiconductor family. Materials in this composition space are primarily investigated for thermoelectric applications and infrared detection, where their narrow bandgaps and strong spin-orbit coupling enable efficient conversion between thermal and electrical energy, or sensitive detection of mid-to-long-wavelength infrared radiation. The heavy doping and specific stoichiometry suggest this is a research compound optimized for enhanced carrier mobility and thermal properties compared to undoped or differently-doped lead chalcogenide variants.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2300 | eV | — |