Ge0.01Pb0.99Se1

semiconductor

· Ge0.01Pb0.99Se1

Ge0.01Pb0.99Se is a lead selenide-based narrow bandgap semiconductor with germanium doping, belonging to the IV-VI semiconductor family used in infrared and thermal sensing applications. This material is primarily investigated for mid- to long-wavelength infrared (IR) detection, thermal imaging, and radiometric measurement systems where sensitivity to heat radiation is critical. Lead selenide compounds are well-established in IR detector technology, and germanium doping modifies electronic structure to optimize performance for specific spectral windows; this composition represents a research-grade variant optimized for tuning bandgap or improving detector characteristics compared to pure PbSe.

infrared detectorsthermal imaging sensorsradiometric measurementIR photodetectorsnarrow-bandgap semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2700	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge0.01Pb0.99Se1

Electrical Properties

Regulatory Screening

Environmental

Export Control