GdB(SbO4)2 is a rare-earth compound semiconductor combining gadolinium, boron, and antimony oxide in a mixed-anion structure. This is primarily a research material investigated for potential optoelectronic and photonic applications, particularly in the context of rare-earth-doped semiconductors and advanced optical devices; industrial deployment remains limited pending further characterization and performance optimization.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.480 | eV | — |