GdAs

semiconductor

· GdAs

Gadolinium arsenide (GdAs) is a rare-earth compound semiconductor combining gadolinium and arsenic, belonging to the III-V semiconductor family. It is primarily a research material investigated for optoelectronic and magnetoelectronic applications due to gadolinium's strong magnetic properties combined with semiconducting behavior. While not yet widely commercialized, GdAs and similar rare-earth arsenides show promise in specialized fields requiring integration of magnetic and electronic functionality, such as spintronic devices and magnetic semiconductor heterostructures.

spintronics and spin-valve devicesmagnetic semiconductor researchoptoelectronic heterostructuresmagneto-optical applicationsresearch-phase materialsrare-earth compound semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6300	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GdAs

Electrical Properties

Regulatory Screening

Environmental

Export Control