Gd4GaSbS9
semiconductorGd₄GaSbS₉ is a quaternary semiconductor compound combining gadolinium, gallium, antimony, and sulfur—a rare-earth chalcogenide belonging to the class of ternary and quaternary sulfide semiconductors. This material is primarily of research interest as a potential wide-bandgap or intermediate-bandgap semiconductor; such compounds are explored for photovoltaic applications, nonlinear optical devices, and radiation detection where the incorporation of rare-earth elements can modify electronic structure and enhance performance. While not yet widely deployed in high-volume manufacturing, gadolinium-based chalcogenides represent an emerging materials family for next-generation optoelectronic and photonic applications where conventional semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |