GaZnON2

ceramic

· GaZnON2

GaZnON2 is an experimental quaternary ceramic compound combining gallium, zinc, oxygen, and nitrogen—representing research into wide-bandgap semiconductor oxides and oxynitride materials. This composition sits at the intersection of oxide and nitride ceramic chemistry, with potential applications in optoelectronic and high-temperature semiconductor devices where enhanced thermal stability or modified electronic properties are sought. While not yet commercialized at scale, materials in this family are investigated for next-generation power electronics, UV photonics, and wide-bandgap device platforms as alternatives to or complements of established systems like GaN (gallium nitride) and ZnO (zinc oxide).

wide-bandgap semiconductorsoptoelectronic researchUV light-emitting deviceshigh-temperature power electronicsceramic thin filmsexperimental compound development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.1861	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.100	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaZnON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental