GaZnO3 is a ternary oxide ceramic compound combining gallium, zinc, and oxygen elements, belonging to the family of wide-bandgap semiconductor oxides. This material is primarily of research interest rather than established in high-volume production, with potential applications in optoelectronic devices, transparent conductive coatings, and high-temperature semiconductor applications where its oxide stability and electronic properties offer advantages over binary alternatives. Engineers evaluating GaZnO3 should consider it as an experimental material for specialized applications requiring the combined benefits of gallium oxide's wide bandgap with zinc oxide's transparency and electrical characteristics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.5633 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -0.5120 | eV/atom | — | ||
| ↳ | 1.040 | eV/atom | — |