GaYN3 is a gallium yttrium nitride ceramic compound combining gallium nitride (GaN) with yttrium for enhanced properties. This material is primarily of research interest for wide-bandgap semiconductor and high-temperature ceramic applications, where the yttrium addition is explored to improve thermal stability, mechanical performance, or electronic characteristics compared to binary GaN systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 5.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.020 | eV/atom | — |