GaWN3

GaWN3 is an experimental ternary nitride compound combining gallium, tungsten, and nitrogen, representing research into high-performance refractory and wide-bandgap semiconductor materials. While not yet in established industrial production, this material family is being investigated for extreme-environment applications where conventional nitrides (GaN, AlN) reach performance limits—particularly in high-temperature electronics, power devices, and harsh chemical environments. The incorporation of tungsten into a gallium nitride matrix offers potential for enhanced thermal stability and mechanical properties compared to binary nitrides, though further development is needed to establish manufacturing scalability and cost viability.