GaUO3

semiconductor

· GaUO3

GaUO₃ is a ternary oxide semiconductor compound combining gallium and uranium oxides, currently in the research and development phase rather than established in commercial production. This material belongs to the family of complex metal oxides and is primarily investigated for its potential in nuclear-related applications, advanced optoelectronics, and materials science studies exploring uranium-bearing semiconductors. While not yet widely deployed in industry, compounds in this family are of interest to researchers studying radiation tolerance, photocatalytic properties, and specialized solid-state applications where uranium oxides play a functional role.

nuclear materials researchexperimental semiconductorsradiation-resistant compoundsadvanced ceramics developmentsolid-state physics studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.492	eV	—
Magnetic Moment(μB)	0.2000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.623	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaUO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control