GaTlOFN

ceramic

· GaTlOFN

GaTlOFN is an experimental oxynitride ceramic compound combining gallium, thallium, oxygen, and nitrogen elements. This material belongs to the family of complex metal oxynitrides, which are primarily investigated in research settings for their potential in high-temperature structural applications and advanced electronic/photonic devices. The combination of these elements suggests potential utility in extreme-environment applications where conventional ceramics fall short, though industrial adoption remains limited pending further development and property validation.

High-temperature ceramics (research)Advanced refractory materialsOptoelectronic substrates (experimental)Thermal barrier coatings (development)Wide-bandgap semiconductors (research)

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.8837	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.580	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaTlOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental