GaTlO₃ is a ternary oxide semiconductor compound combining gallium, thallium, and oxygen, belonging to the family of mixed-metal oxides with potential for wide-bandgap semiconductor applications. This material remains largely in the research phase, studied primarily for its electronic and optical properties as an alternative or complement to more established wide-bandgap semiconductors like gallium oxide (Ga₂O₃) and aluminum oxide. The inclusion of thallium introduces unique electronic characteristics that researchers are investigating for high-power electronics, UV photodetection, and specialized optoelectronic devices where conventional semiconductors reach their performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.2160 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.4019 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.377 | eV/atom | — | ||
| ↳ | 1.280 | eV/atom | — |