GaTiO2F
semiconductorGaTiO₂F is a mixed-metal oxyhalide semiconductor compound combining gallium, titanium, oxygen, and fluorine, representing an emerging class of functional materials at the intersection of oxide and halide perovskite chemistry. This is primarily a research-phase compound under investigation for photocatalytic and optoelectronic applications, where the fluorine substitution aims to tune band gap, improve charge carrier dynamics, or enhance structural stability compared to conventional titanium dioxide or gallium oxide semiconductors. The material family shows promise for visible-light photocatalysis, environmental remediation, and potentially thin-film electronics, though industrial-scale production and commercialization pathways remain underdeveloped.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |