GaTiN3

metal

· GaTiN3

GaTiN₃ is an experimental ternary nitride compound combining gallium, titanium, and nitrogen, belonging to the family of transition metal nitrides being investigated for advanced functional and structural applications. This material remains primarily in research phase, with interest driven by the potential for high hardness, thermal stability, and electrical properties that could exceed those of conventional binary nitrides like TiN or GaN in specific applications. The compound represents an emerging area in ceramic and refractory materials science where multi-element nitride systems are being explored for next-generation wear-resistant coatings, high-temperature semiconductors, and electronic device applications.

experimental compoundhard coatings and wear protectionhigh-temperature ceramicssemiconductor researchrefractory materialsthin-film deposition

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.228	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.500	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaTiN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control