GaTeO2F

semiconductor

· GaTeO2F

GaTeO₂F is an experimental mixed-anion semiconductor compound combining gallium, tellurium, oxygen, and fluorine. This material belongs to the family of halide-based semiconductors and oxyhalides, which are being investigated for their potential in photonic and electronic applications where tunable bandgaps and unique crystal structures are advantageous. GaTeO₂F remains primarily a research-phase material; its practical adoption is limited, but compounds in this chemical family show promise for optoelectronic devices, photocatalysis, and next-generation semiconductor platforms where conventional III-V semiconductors have limitations.

photonic devices (research)optoelectronic semiconductorsphotocatalytic applicationsbandgap engineeringthin-film electronicsnext-generation semiconductors

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?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-1.749e-15	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7400	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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GaTeO2F — Properties & Data | MatWorld

GaTeO2F

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